Emerging non-volatile memories based on resistive switching mechanisms attract\r\nintense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces\r\nMemories (OxRAM) gather noteworthy performances, such as fast write/read speed, low\r\npower and high endurance outperforming therefore conventional Flash memories. To fully\r\nexplore new design concepts such as distributed memory in logic, OxRAM compact models\r\nhave to be developed and implemented into electrical simulators to assess performances at\r\na circuit level. In this paper, we present compact models of the bipolar OxRAM memory\r\nbased on physical phenomenons. This model was implemented in electrical simulators for\r\nsingle device up to circuit level.
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